fqd17p06/ FQU17P06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation 1 www.fairchildsemi.com fqd17p06/ FQU17P06 rev.c0 june 2013 fqd17p06 / FQU17P06 p-channel qfet ? mosfet - 60 v, - 12 a, 135 m description this p-channel enhancement mode power mosfet is produced using fairchild semiconductor ? ?s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switching power applications. features ? -12 a, -60 v, r ds(on) = 135 m (max.) @ v gs = -10 v ? low gate charge (typ. 21 nc) ? low crss (typ. 80 pf) ? 100% avalanche tested ? 175c maximum junction temperature rating absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter fqd17p06 / FQU17P06 unit v dss drain-source voltage -60 v i d drain current - continuous (t c = 25c) -12 a - continuous (t c = 100c) -7.6 a i dm drain current - pulsed (note 1) -48 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 300 mj i ar avalanche current (note 1) -12 a e ar repetitive avalanche energy (note 1) 4.4 mj dv/dt peak diode recovery dv/dt (note 3) -7.0 v/ns p d power dissipation (t a = 25c) * 2.5 w power dissipation (t c = 25c) 44 w - derate above 25c 0.35 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter fqd17p06 / FQU17P06 unit r jc thermal resistance, junction-to-case, max. 2.85 c / w r ja thermal resistance, junction-to-ambient *, typ. 50 r ja thermal resistance, junction-to-ambient, max. 110 * when mounted on the minimum pad size recommended (pcb mount) ? { { { ? { { { s d g s d g d-pak (to252) i-pak (to251) g d s
fqd17p06/ FQU17P06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation 2 www.fairchildsemi.com fqd17p06/ FQU17P06 rev.c0 elerical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 2.4mh, i as = -12a, v dd = -25v, r g = 25 , starting t j = 25c 3. i sd - 17 a, di/dt 300a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -60 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.06 -- v/c i dss zero gate voltage drain current v ds = -60 v, v gs = 0 v -- -- -1 a v ds = -48 v, t c = 125c -- -- -10 a i gssf gate-body leakage current, forward v gs = -25 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 25 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -2.0 -- -4.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -6.0 a -- 0.11 0.135 g fs forward transconductance v ds = -30 v, i d = -6.0 a -- 8.7 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 690 900 pf c oss output capacitance -- 325 420 pf c rss reverse transfer capacitance -- 80 105 pf switching characteristics t d(on) turn-on delay time v dd = -30 v, i d = -8.5 a, r g = 25 -- 13 35 ns t r turn-on rise time -- 100 210 ns t d(off) turn-off delay time -- 22 55 ns t f turn-off fall time -- 60 130 ns q g total gate charge v ds = -48 v, i d = -17 a, v gs = -10 v -- 21 27 nc q gs gate-source charge -- 4.2 -- nc q gd gate-drain charge -- 10 -- nc drain-source diode characte ristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- -12 a i sm maximum pulsed drain-source diode forward current -- -- -48 a v sd drain-source diode forward voltage v gs = 0 v, i s = -12 a -- -- -4.0 v t rr reverse recovery time v gs = 0 v, i s = -17 a, di f / dt = 100 a/ s -- 92 -- ns q rr reverse recovery charge -- 0.32 -- c (note 4) (note 4)
fqd17p06/ FQU17P06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation 3 www.fairchildsemi.com fqd17p06/ FQU17P06 rev.c0 0 102030405060 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 0.36 0.40 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ], drain-source on-resistance -i d , drain current [a] 10 -1 10 0 10 1 10 0 10 1 v gs top : - 15.0 v - 10.0 v - 8.0 v - 7.0 v - 6.0 v - 5.5 v - 5.0 v bottom : - 4.5 v notes : 1. 250 s pulse test 2. t c = 25 -i d , drain current [a] -v ds , drain-source voltage [v] 0 4 8 12162024 0 2 4 6 8 10 12 v ds = -30v v ds = -48v note : i d = -17 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 246810 10 -1 10 0 10 1 150 25 -55 notes : 1. v ds = -30v 2. 250 s pulse test -i d , drain current [a] -v gs , gate-source voltage [v] typical characteristics figure 5. capacitance characteristics figu re 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
fqd17p06/ FQU17P06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation 4 www.fairchildsemi.com fqd17p06/ FQU17P06 rev.c0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1 . z jc (t) = 2.85 /w m a x. 2 . d u ty f a cto r, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 0 2 4 6 8 10 12 -i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse -i d , drain current [a] -v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = -10 v 2. i d = -6.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2
fqd17p06/ FQU17P06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation 5 www.fairchildsemi.com fqd17p06/ FQU17P06 rev.c0 charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fqd17p06/ FQU17P06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation 6 www.fairchildsemi.com fqd17p06/ FQU17P06 rev.c0 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fqd17p06/ FQU17P06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation 7 www.fairchildsemi.com fqd17p06/ FQU17P06 rev.c0 mechanical dimensions dimensions in millimeters d-pak to-252 (dpak) molded, 3 lead, option aa package drawings are provided as a service to customers considering fairchild compone nts. drawings may change in any manner wit hout notice. please note the revision and/or date on the drawing and c ontact a fairchild semiconductor representative to verify or o btain the most recent revision. package specific ations do not expand the terms of fairchild?s wo rldwide terms and condit ions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt252-003
fqd17p06/ FQU17P06 p-channel qfet ? mosfet ?2001 fairchild semiconductor corporation 8 www.fairchildsemi.com fqd17p06/ FQU17P06 rev.c0 mechanical dimensions i-pak dimensions in millimeters to-251 (ipak) molded, 3lead, option aa package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner wit hout notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to verify or o btain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt251-003
fqd17p06/ FQU17P06 p-channel qfet ? mosfet trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information for mative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor re serves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-c ounterfeiting policy. fairchild?s anti-count erfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manuf actures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadv ertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of producti on and manufacturing delays. fairchild is taki ng strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. product s customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchil d will not provide any warranty coverage or other assistance for pa rts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 tm ? ?2001 fairchild semiconductor corporation 9 www.fairchildsemi.com fqd17p06/ FQU17P06 rev.c0
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